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By Daniel M. Fleetwood,Ronald D. Schrimpf

Uncover the Defects that Compromise functionality and Reliability
As microelectronics positive aspects and units develop into smaller and extra advanced, it really is severe that engineers and technologists thoroughly know how elements might be broken throughout the more and more complex fabrication techniques required to supply them.

A entire survey of defects that ensue in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) applied sciences, this e-book additionally discusses flaws in linear bipolar applied sciences, silicon carbide-based units, and gallium arsenide fabrics and units. those defects can profoundly have an effect on the yield, functionality, long term reliability, and radiation reaction of microelectronic units and built-in circuits (ICs). Organizing the fabric to construct knowing of the issues and supply a short reference for scientists, engineers and technologists, this article studies yield- and performance-limiting defects and impurities within the gadget silicon layer, within the gate insulator, and/or on the severe Si/SiO2 interface. It then examines defects that effect construction yield and long term reliability, including:

  • Vacancies, interstitials, and impurities (especially hydrogen)

  • Negative bias temperature instabilities

  • Defects in ultrathin oxides (SiO2 and silicon oxynitride)

Take A Proactive method
The authors condense many years of expertise and views of famous experimentalists and theorists to represent illness homes and their impression on microelectronic units. They determine the defects, providing suggestions to prevent them and strategies to observe them. those contain using 3D imaging, in addition to electric, analytical, computational, spectroscopic, and state of the art microscopic equipment. This e-book is a necessary examine demanding situations to come back from rising fabrics, akin to high-K gate dielectrics and high-mobility substrates being constructed to interchange Si02 because the most popular gate dielectric fabric, and high-mobility substrates.

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Defects in Microelectronic Materials and Devices by Daniel M. Fleetwood,Ronald D. Schrimpf

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